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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current. Fall time CONDITIONS VBE = 0 V TYP. 8 6.5 0.3 0.14 MAX. 1500 800 11 29 125 3.0 0.4 UNIT V V A A W V A A s s Ths 25 C IC = 8 A; IB = 2 A f = 16 kHz f = 70 kHz ICsat = 8 A; f = 16 kHz ICsat = 6.5 A; f = 70 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 7 125 150 150 UNIT V V A A A A A W C C Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 45 MAX. 1 UNIT K/W K/W 1 Turn-off current. May 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 6 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8 A; IB = 2 A IC = 8 A; IB = 2 A IC = 1 A; VCE = 5 V IC = 8 A; VCE = 5 V MIN. 7.5 800 0.85 4.2 TYP. 12.5 0.95 14 5.8 MAX. 1.0 2.0 100 3.0 1.1 7.3 UNIT mA mA A V V V V DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time Switching times (70 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time ICsat = 6.5 A;IB1 = 1.3 A (IB2 = -3.9 A) 2.3 0.14 s s CONDITIONS ICsat = 8.0 A;IB1 = 1.6 A (IB2 = -4.0 A) 4.5 0.30 5.5 0.40 s s TYP. MAX. UNIT IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). May 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB IB1 t 20us 26us 64us VCE IB2 IBend LB T.U.T. Cfb -VBB t Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit. TRANSISTOR IC DIODE ICsat 100 hFE VCE = 1 V BU4523AF/X Ths = 25 C Ths = 85 C t IB IB1 t 2.5us 7.1us 14.2us IB2 10 VCE 1 0.01 0.1 1 10 100 t IC / A Fig.4. Switching times waveforms (70 kHz). Fig.7. High and low DC current gain. ICsat 90 % IC 100 hFE VCE = 5 V BU4523AF/X Ths = 25 C Ths = 85 C 10 % tf ts IB IB1 t 10 t 1 0.01 0.1 1 10 100 - IB2 IC / A Fig.5. Switching times definitions. Fig.8. High and low DC current gain. May 1998 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW VCEsat / V 10 Ths = 25 C Ths = 85 C 1 BU4523AF/X 120 110 100 90 80 70 60 50 PD% Normalised Power Derating with heatsink compound 0.1 IC/IB = 5 40 30 20 10 0 0.01 0.1 0 1 10 IC / A 100 20 40 60 80 Ths / C 100 120 140 Fig.9. Typical collector-emitter saturation voltage. Fig.12. Normalised power dissipation. PD% = 100PD/PD 25C VBEsat / V 1.2 1.1 1 0.9 IC = 8 A BU4523AF/X Ths = 25 C Ths = 85 C Zth K/W 10 BU4523AW 1 0.5 0.2 0.1 0.1 0.05 0.8 0.7 0.6 IC = 6.5 A 0.01 0.02 P D tp D= tp T t 1E+01 0 1 2 3 IB / A 4 0.001 1E-07 0 1E-05 1E-03 t/s T 1E-01 Fig.10. Typical base-emitter saturation voltage. Fig.13. Transient thermal impedance. ts/tf / us 10 BU4523AF/X 16kHz 8 ICsat = 8 A Ths = 85 C Freq = 16 kHz ts VCC 6 LC 4 IBend 2 VCL LB T.U.T. CFB tf -VBB 0 0 1 2 3 IB / A 4 Fig.11. Typical collector storage and fall time. IC =8 A; Tj = 85C; f = 16kHz Fig.14. Test Circuit RBSOA. May 1998 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW IC / A 30 BU2523 10 9 8 Ic(sat) (A) 20 7 6 5 10 4 3 2 0 100 VCE / V 1000 1500 1 0 0 10 20 30 50 70 40 60 Horizontal frequency (kHz) 80 90 100 Fig.15. Reverse bias safe operating area. Tj Tjmax Fig.16. ICsat during normal running vs. frequency of operation for optimum performance May 1998 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.17. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". May 1998 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 7 Rev 1.000 |
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